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Nano-sized GaN HEMT simulator

GaN HEMT device analysis tool

Explanation of the physical model used for analyzing APSYS's field-effect transistor (FET) devices. Introduction of the quantum ballistic current transport model. Comparison of simulation results for GaN HEMT using the Non-Equilibrium Green's Function (NEGF) method and the drift-diffusion equation in APSYS. The results from NEGF are similar to the experimental results in terms of the shape of the I-V characteristics.